High-side driver

Next-generation VIPower M intelligent high-side switches. The latest series of high-side drivers, built on VIPower M technology, offer higher power density, greater accuracy in critical diagnostic and new protection features. This series covers a wide spectrum of R DS (on) values (up to mΩ) and package options, ensuring design scalability. In Figure 4, U1, Isolated gate driver, UCC53xx is used as a high-side driver, and is supplied using an isolated bias supply on the power side and VCC . High-Side Switches and MOSFET Drivers. Analog Devices’ growing portfolio of high-side switches and MOSFET (FET) drivers provides a simple and effective solution to drive single, dual, triple, or quad N-channel or P-channel FETs. Key features include wide input range of operation, extended temperature range of operation, a powerful gate drive, and short-circuit .

In Figure 4, U1, Isolated gate driver, UCC53xx is used as a high-side driver, and is supplied using an isolated bias supply on the power side and VCC from the signal side. The supply Vbias1 is referenced to. With a high-side driver, it will short the driver output to ground, so the driver will need protection circuitry. The opposite condition will apply for a short-to-supply fault: the low-side driver will be shorted to the supply and need protection, while the high-side load will be permanently on. The high-side switches are better for turning power rails on and off. Because of the pull-up resistor, they are usually driven by an output pin configured as an open-drain (OD). The logic is backwards however; to turn the MOSFET on, you put a ground on the gate.

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